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13 Feb 2012 15:49:35 IST

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Semiconductor

Physics

In an intrinsic semiconductor, the energy gap E_gis 1.2eV. Its hole mobility is very much smaller than electron mobility and is independent of temp. What is the ratio b/w conductivity at 600K and that at 300K?

Assume temp. dependence of intrinsic carrier conc. n_iis expressed as

n_i=n_oexp[-E_g/2k_bT]

where n_o is a constant and k_b=8.62*10^-5eVK^-1 is Boltzmann constant.

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